N-channel enhancement mode power MOSFET featuring 20V drain-source voltage and 8A continuous drain current. This single MOSFET utilizes silicon material and is housed in a 6-pin MCPH package with flat leads, measuring 2mm x 1.6mm x 0.88mm. Designed for surface mounting, it offers a low 22mΩ drain-source resistance at 4.5V gate-source voltage and a maximum power dissipation of 1500mW.
PackageMCPH
MountingSurface Mount
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Technical Specifications
Onsemi MCH6448-TL-H technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
SOT
Package/Case
MCPH
Lead Shape
Flat
Pin Count
6
PCB
6
Package Length (mm)
2
Package Width (mm)
1.6
Package Height (mm)
0.88(Max)
Seated Plane Height (mm)
0.85
Pin Pitch (mm)
0.65
Package Material
Plastic
Mounting
Surface Mount
Configuration
Single Quad Drain
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
20V
Maximum Gate Source Voltage
±9V
Maximum Continuous Drain Current
8A
Material
Si
Maximum Gate Threshold Voltage
1V
Maximum Drain Source Resistance
Typical Gate Charge @ Vgs
Typical Input Capacitance @ Vds
705@10VpF
Maximum Power Dissipation
1500mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
5V1P1
EU RoHS
Yes with Exemption
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Onsemi MCH6448-TL-H Datasheet
Download the complete datasheet for Onsemi MCH6448-TL-H to view detailed technical specifications.
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