N-channel MOSFET, designed for small signal applications, features a 750mA continuous drain current and a 20V drain-to-source breakdown voltage. This surface-mount component, housed in a SOT-23 package, offers a low on-resistance of 90mR. It operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 400mW. Key electrical characteristics include a 1.7V threshold voltage and 125pF input capacitance.
PackageSOT-23
Current Rating750mA
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi MGSF1N02LT1 technical specifications.
General
| Package/Case | SOT-23 |
| Continuous Drain Current (ID) | 750mA |
| Current Rating | 750mA |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 90mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 1ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 125pF |
| Lead Free | Contains Lead |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 400mW |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 400mW |
| Rds On Max | 90mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | No |
| Threshold Voltage | 1.7V |
| Turn-Off Delay Time | 16ns |
| DC Rated Voltage | 20V |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi MGSF1N02LT1 Datasheet
Download the complete datasheet for Onsemi MGSF1N02LT1 to view detailed technical specifications.
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