The MJ14001G PNP transistor is a TO-204-3 packaged device with a collector-emitter breakdown voltage of 60V and a maximum collector current of 60A. It has a maximum power dissipation of 300W and operates over a temperature range of -65°C to 200°C. The transistor is RoHS compliant and lead-free. It has a high current gain of 30 and a low collector-emitter saturation voltage of 1V.
PackageTO-204-3
Current Rating-60A
PolarityPNP
Power300W
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Technical Specifications
Onsemi MJ14001G technical specifications.
General
| Package/Case | TO-204-3 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 1V |
| Collector-emitter Voltage-Max | 3V |
| Current Rating | -60A |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 30 |
| Lead Free | Lead Free |
| Max Collector Current | 60A |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 300W |
| Package Quantity | 100 |
| Packaging | Tray |
| Polarity | PNP |
| Power Dissipation | 300W |
| RoHS Compliant | Yes |
| DC Rated Voltage | -60V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MJ14001G Datasheet
Download the complete datasheet for Onsemi MJ14001G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.