PNP Bipolar Junction Transistor (BJT) featuring a 60V collector-emitter voltage (VCEO) and a maximum collector current of 15A. This power transistor offers a 115W power dissipation and operates within a temperature range of -65°C to 200°C. Key specifications include a 2.5MHz transition frequency and a minimum hFE of 20. Packaged in a TO-204-3 (TO-3) metal can, this lead-free and RoHS-compliant component is supplied in a 100-piece tray.
Frequency2.5MHz
PackageTO-204-3
Current Rating-15A
PolarityPNP
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Technical Specifications
Onsemi MJ2955G technical specifications.
General
| Package/Case | TO-204-3 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 1.1V |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 3V |
| Current Rating | -15A |
| Emitter Base Voltage (VEBO) | 7V |
| Frequency | 2.5MHz |
| Gain Bandwidth Product | 2.5MHz |
| Height | 1.05inch |
| hFE Min | 20 |
| Lead Free | Lead Free |
| Length | 1.55inch |
| Max Collector Current | 15A |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 115W |
| Number of Elements | 1 |
| Package Quantity | 100 |
| Packaging | Tray |
| Polarity | PNP |
| Power Dissipation | 115W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 2.5MHz |
| DC Rated Voltage | -60V |
| Width | 0.335inch |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MJ2955G Datasheet
Download the complete datasheet for Onsemi MJ2955G to view detailed technical specifications.
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