NPN Bipolar Power Transistor, TO-204 package, featuring a 90V collector-emitter breakdown voltage and 30A continuous collector current. This component offers a maximum power dissipation of 200W and a transition frequency of 2MHz. It operates within a temperature range of -65°C to 200°C and boasts a minimum DC current gain (hFE) of 25. Packaged in a 100-unit tray, this RoHS compliant transistor is designed for demanding power applications.
Frequency2MHz
PackageTO-204-3
Current Rating30A
PolarityNPN
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Technical Specifications
Onsemi MJ802G technical specifications.
General
| Package/Case | TO-204-3 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 90V |
| Collector Emitter Saturation Voltage | 800mV |
| Collector Emitter Voltage (VCEO) | 90V |
| Collector-emitter Voltage-Max | 800mV |
| Current Rating | 30A |
| Emitter Base Voltage (VEBO) | 4V |
| Frequency | 2MHz |
| Gain Bandwidth Product | 2MHz |
| Height | 1.05inch |
| hFE Min | 25 |
| Lead Free | Lead Free |
| Length | 1.55inch |
| Max Collector Current | 30A |
| Max Frequency | 2MHz |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 200W |
| Number of Elements | 1 |
| Package Quantity | 100 |
| Packaging | Tray |
| Polarity | NPN |
| Power Dissipation | 200W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 2MHz |
| DC Rated Voltage | 90V |
| Width | 0.335inch |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MJ802G Datasheet
Download the complete datasheet for Onsemi MJ802G to view detailed technical specifications.
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