NPN Bipolar Junction Power Transistor, 6A continuous collector current, 100V collector-emitter breakdown voltage. Features a maximum collector-emitter saturation voltage of 1.5V and a minimum DC current gain (hFE) of 30. Operates with a transition frequency of 3MHz and is housed in a TO-263-3 (D2PAK) package. Supplied on an 800-piece tape and reel.
Onsemi MJB41CT4 technical specifications.
| Package/Case | TO-263-3 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 1.5V |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector-emitter Voltage-Max | 1.5V |
| Current Rating | 6A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 3MHz |
| Gain Bandwidth Product | 3MHz |
| hFE Min | 30 |
| Lead Free | Contains Lead |
| Max Collector Current | 700uA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 2W |
| Number of Elements | 1 |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 2W |
| RoHS Compliant | No |
| Transition Frequency | 3MHz |
| DC Rated Voltage | 100V |
| RoHS | Not Compliant |
Download the complete datasheet for Onsemi MJB41CT4 to view detailed technical specifications.
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