NPN Bipolar Junction Transistor (BJT) in a D2PAK package, featuring a 100V collector-emitter voltage (VCEO) and a 6A maximum collector current. This power transistor offers a maximum power dissipation of 65W and a transition frequency of 3MHz. With a minimum hFE of 30 and a collector-emitter saturation voltage of 1.5V, it operates across a temperature range of -65°C to 150°C. Packaged on an 800-piece tape and reel, this RoHS compliant component is designed for high-power applications.
Frequency3MHz
PackageD2PAK
Current Rating6A
PolarityNPN
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Technical Specifications
Onsemi MJB41CT4G technical specifications.
General
| Package/Case | D2PAK |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 1.5V |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector-emitter Voltage-Max | 1.5V |
| Current Rating | 6A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 3MHz |
| Gain Bandwidth Product | 3MHz |
| Height | 4.83mm |
| hFE Min | 30 |
| Lead Free | Lead Free |
| Length | 10.29mm |
| Max Breakdown Voltage | 100V |
| Max Collector Current | 6A |
| Max Frequency | 1MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 65W |
| Number of Elements | 1 |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 3MHz |
| DC Rated Voltage | 100V |
| Width | 9.65mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MJB41CT4G Datasheet
Download the complete datasheet for Onsemi MJB41CT4G to view detailed technical specifications.
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