NPN bipolar power transistor featuring an 80V collector-emitter breakdown voltage and a 10A continuous collector current. This component offers a maximum power dissipation of 50W and operates with a transition frequency of 50MHz. Packaged in a D2PAK with 2 leads, it is RoHS compliant and designed for tape and reel packaging.
Frequency50MHz
PackageD2PAK
Current Rating10A
PolarityNPN
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Technical Specifications
Onsemi MJB44H11T4G technical specifications.
General
| Package/Case | D2PAK |
| Collector Base Voltage (VCBO) | 5V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 1V |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 1V |
| Current Rating | 10A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 50MHz |
| Gain Bandwidth Product | 50MHz |
| Height | 4.83mm |
| hFE Min | 60 |
| Lead Free | Lead Free |
| Length | 10.29mm |
| Max Breakdown Voltage | 80V |
| Max Collector Current | 10A |
| Max Frequency | 20MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 50W |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 50MHz |
| DC Rated Voltage | 80V |
| Width | 9.65mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MJB44H11T4G Datasheet
Download the complete datasheet for Onsemi MJB44H11T4G to view detailed technical specifications.
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