
PNP Darlington Bipolar Junction Transistor (BJT) in a DPAK package. Features a 100V collector-emitter breakdown voltage and a continuous collector current of 8A. Offers a maximum power dissipation of 1.75W and operates within a temperature range of -65°C to 150°C. This component is RoHS and Halogen Free compliant, supplied on tape and reel.
Onsemi MJD127T4G technical specifications.
| Package/Case | DPAK |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 2V |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector-emitter Voltage-Max | 4V |
| Continuous Collector Current | 8A |
| Current Rating | -8A |
| Emitter Base Voltage (VEBO) | 5V |
| Halogen Free | Halogen Free |
| Height | 2.38mm |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Breakdown Voltage | 100V |
| Max Collector Current | 8A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.75W |
| Number of Elements | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 20W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 4MHz |
| DC Rated Voltage | -100V |
| Width | 6.22mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi MJD127T4G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
