NPN Bipolar Junction Power Transistor, 5A continuous collector current, 25V collector-emitter voltage (VCEO). Features 1.8V collector-emitter saturation voltage and 65MHz transition frequency. Housed in a DPAK package, this lead-free component operates from -65°C to 150°C with a maximum power dissipation of 1.4W.
Onsemi MJD200G technical specifications.
| Package/Case | DPAK |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 25V |
| Collector Emitter Saturation Voltage | 1.8V |
| Collector Emitter Voltage (VCEO) | 25V |
| Collector-emitter Voltage-Max | 1.8V |
| Current Rating | 5A |
| Emitter Base Voltage (VEBO) | 8V |
| Frequency | 65MHz |
| Gain Bandwidth Product | 65MHz |
| Height | 0.094inch |
| hFE Min | 70 |
| Lead Free | Lead Free |
| Length | 0.264inch |
| Max Collector Current | 5A |
| Max Frequency | 10MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.4W |
| Number of Elements | 1 |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 1.4W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 65MHz |
| DC Rated Voltage | 25V |
| Width | 0.245inch |
| RoHS | Compliant |
Download the complete datasheet for Onsemi MJD200G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
