NPN Bipolar Junction Transistor (BJT) in a TO-252-3 package, designed for power applications. Features a maximum collector current of 5A and a collector-emitter breakdown voltage of 25V. Offers a minimum DC current gain (hFE) of 70 and a transition frequency of 65MHz. This RoHS compliant component operates within a temperature range of -65°C to 150°C and is supplied on an 1800-piece tape and reel.
Frequency65MHz
PackageTO-252-3
Current Rating5A
PolarityNPN
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Technical Specifications
Onsemi MJD200RLG technical specifications.
General
| Package/Case | TO-252-3 |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 25V |
| Collector Emitter Saturation Voltage | 1.8V |
| Collector Emitter Voltage (VCEO) | 25V |
| Collector-emitter Voltage-Max | 1.8V |
| Current Rating | 5A |
| Emitter Base Voltage (VEBO) | 8V |
| Frequency | 65MHz |
| Gain Bandwidth Product | 65MHz |
| hFE Min | 70 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 25V |
| Max Collector Current | 5A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.4W |
| Number of Elements | 1 |
| Package Quantity | 1800 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 1.4W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | MJD200 |
| Transition Frequency | 65MHz |
| DC Rated Voltage | 25V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MJD200RLG Datasheet
Download the complete datasheet for Onsemi MJD200RLG to view detailed technical specifications.
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