NPN Bipolar Junction Transistor (BJT) in a DPAK package, featuring a 5A maximum collector current and 25V collector-emitter breakdown voltage. This power transistor offers a minimum DC current gain (hFE) of 70 and a transition frequency of 65MHz. Designed for efficient power handling, it has a maximum power dissipation of 12.5W and operates within a temperature range of -65°C to 150°C. Supplied on a 2500-piece tape and reel, this RoHS compliant component is ideal for various switching and amplification applications.
Frequency65MHz
PackageDPAK
Current Rating5A
PolarityNPN
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Technical Specifications
Onsemi MJD200T4G technical specifications.
General
| Package/Case | DPAK |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 25V |
| Collector Emitter Saturation Voltage | 1.8V |
| Collector Emitter Voltage (VCEO) | 25V |
| Collector-emitter Voltage-Max | 1.8V |
| Current Rating | 5A |
| Emitter Base Voltage (VEBO) | 8V |
| Frequency | 65MHz |
| Gain Bandwidth Product | 65MHz |
| hFE Min | 70 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 25V |
| Max Collector Current | 5A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 12.5W |
| Number of Elements | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 1.4W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 65MHz |
| DC Rated Voltage | 25V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MJD200T4G Datasheet
Download the complete datasheet for Onsemi MJD200T4G to view detailed technical specifications.
No datasheet is available for this part.