PNP Bipolar Junction Transistor (BJT) in a DPAK package, featuring a 25V collector-emitter voltage and a 5A maximum collector current. This power transistor offers a 65MHz gain bandwidth product and a 1.4W power dissipation. It operates within a temperature range of -65°C to 150°C and is RoHS compliant.
Frequency65MHz
PackageDPAK
Current Rating-5A
PolarityPNP
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Technical Specifications
Onsemi MJD210RLG technical specifications.
General
| Package/Case | DPAK |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 25V |
| Collector Emitter Saturation Voltage | 1.8V |
| Collector Emitter Voltage (VCEO) | 25V |
| Collector-emitter Voltage-Max | 1.8V |
| Current Rating | -5A |
| Emitter Base Voltage (VEBO) | 8V |
| Frequency | 65MHz |
| Gain Bandwidth Product | 65MHz |
| Height | 2.38mm |
| hFE Min | 70 |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Breakdown Voltage | 25V |
| Max Collector Current | 5A |
| Max Frequency | 10MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 12.5W |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 1.4W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 65MHz |
| DC Rated Voltage | -25V |
| Width | 6.22mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MJD210RLG Datasheet
Download the complete datasheet for Onsemi MJD210RLG to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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