PNP Silicon Bipolar Junction Transistor (BJT) for power applications. Features a 25V collector-emitter breakdown voltage and a maximum collector current of 5A. Operates with a 1.8V collector-emitter saturation voltage and a 65MHz transition frequency. Housed in a TO-252-3 (DPAK-3) plastic package, this transistor offers a minimum DC current gain (hFE) of 70 and a maximum power dissipation of 1.4W. Suitable for operation across a wide temperature range from -65°C to 150°C.
Frequency65MHz
PackageTO-252-3
Current Rating-5A
PolarityPNP
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Technical Specifications
Onsemi MJD210T4 technical specifications.
General
| Package/Case | TO-252-3 |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 25V |
| Collector Emitter Saturation Voltage | 1.8V |
| Collector Emitter Voltage (VCEO) | 25V |
| Collector-emitter Voltage-Max | 1.8V |
| Current Rating | -5A |
| Emitter Base Voltage (VEBO) | 8V |
| Frequency | 65MHz |
| Gain Bandwidth Product | 65MHz |
| hFE Min | 70 |
| Lead Free | Contains Lead |
| Max Breakdown Voltage | 25V |
| Max Collector Current | 5A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.4W |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 1.4W |
| RoHS Compliant | No |
| Transition Frequency | 65MHz |
| DC Rated Voltage | -25V |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi MJD210T4 Datasheet
Download the complete datasheet for Onsemi MJD210T4 to view detailed technical specifications.
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