PNP Bipolar Junction Transistor (BJT) for surface mount applications. Features a 25V collector-emitter breakdown voltage and a 5A maximum collector current. Operates with a 65MHz transition frequency and a minimum hFE of 45. Packaged in DPAK for tape and reel distribution, this RoHS compliant component offers a maximum power dissipation of 1.4W.
Onsemi MJD210TF technical specifications.
| Package/Case | DPAK |
| Collector Base Voltage (VCBO) | -40V |
| Collector Emitter Breakdown Voltage | 25V |
| Collector Emitter Voltage (VCEO) | 25V |
| Collector-emitter Voltage-Max | 1.8V |
| Current Rating | -5A |
| Emitter Base Voltage (VEBO) | -8V |
| Frequency | 65MHz |
| Gain Bandwidth Product | 65MHz |
| hFE Min | 45 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 25V |
| Max Collector Current | 5A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.4W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 1.4W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 65MHz |
| DC Rated Voltage | -40V |
| Weight | 0.26037g |
| RoHS | Compliant |
Download the complete datasheet for Onsemi MJD210TF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
