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Technical Specifications
Onsemi MJD253T4 technical specifications.
General
| Package/Case | TO-252-3 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 600mV |
| Collector-emitter Voltage-Max | 600mV |
| Current Rating | -4A |
| Emitter Base Voltage (VEBO) | 7V |
| Gain Bandwidth Product | 40MHz |
| hFE Min | 40 |
| Lead Free | Contains Lead |
| Max Breakdown Voltage | 100V |
| Max Collector Current | 4A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.4W |
| Package Quantity | 10 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| RoHS Compliant | No |
| Transition Frequency | 40MHz |
| DC Rated Voltage | -100V |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi MJD253T4 Datasheet
Download the complete datasheet for Onsemi MJD253T4 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.