PNP Bipolar Junction Power Transistor, DPAK Insertion Mount, 75-Tube. Features 60V Collector Emitter Breakdown Voltage, 10A Max Collector Current, and 1.1V Collector Emitter Saturation Voltage. Operates with a 2MHz Transition Frequency and a minimum hFE of 20. Encased in a TO-251-3 package, this component offers a 150°C maximum operating temperature.
Onsemi MJD2955-001 technical specifications.
| Package/Case | TO-251-3 |
| Collector Base Voltage (VCBO) | 70V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 1.1V |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 8V |
| Current Rating | -10A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 2MHz |
| Gain Bandwidth Product | 2MHz |
| hFE Min | 20 |
| Lead Free | Contains Lead |
| Max Collector Current | 10A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.75W |
| Number of Elements | 1 |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | PNP |
| Power Dissipation | 1.75W |
| RoHS Compliant | No |
| Transition Frequency | 2MHz |
| DC Rated Voltage | -60V |
| RoHS | Not Compliant |
Download the complete datasheet for Onsemi MJD2955-001 to view detailed technical specifications.
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