PNP Bipolar Junction Transistor (BJT) in DPAK package. Features a 60V collector-emitter breakdown voltage and a 10A maximum collector current. Offers a 2MHz transition frequency and a minimum hFE of 20. Designed for power applications with a maximum power dissipation of 20W. Packaged on a 2500-piece tape and reel.
Frequency2MHz
PackageDPAK
Current Rating-10A
PolarityPNP
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Technical Specifications
Onsemi MJD2955T4G technical specifications.
General
| Package/Case | DPAK |
| Collector Base Voltage (VCBO) | 70V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 1.1V |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 8V |
| Current Rating | -10A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 2MHz |
| Gain Bandwidth Product | 2MHz |
| Height | 2.38mm |
| hFE Min | 20 |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 10A |
| Max Frequency | 500kHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 20W |
| Number of Elements | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 1.75W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 2MHz |
| DC Rated Voltage | -60V |
| Width | 6.22mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MJD2955T4G Datasheet
Download the complete datasheet for Onsemi MJD2955T4G to view detailed technical specifications.
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