
PNP Bipolar Junction Transistor (BJT) for power applications. Features a 60V collector-emitter voltage rating and a continuous collector current of 10A. Operates with a transition frequency of 2MHz and a minimum hFE of 20. Packaged in a DPAK surface-mount case, this RoHS compliant component offers a maximum power dissipation of 1.75W and operates from -55°C to 150°C.
Onsemi MJD2955TF technical specifications.
| Package/Case | DPAK |
| Collector Base Voltage (VCBO) | -70V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | -1.1V |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 8V |
| Current Rating | -10A |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 2MHz |
| Gain Bandwidth Product | 2MHz |
| Height | 2.3mm |
| hFE Min | 20 |
| Lead Free | Lead Free |
| Length | 6.6mm |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 10A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.75W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 1.75W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 2MHz |
| DC Rated Voltage | -60V |
| Weight | 0.26037g |
| Width | 6.1mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi MJD2955TF to view detailed technical specifications.
No datasheet is available for this part.
