NPN bipolar junction transistor (BJT) for surface mount applications. Features a 100V collector-emitter breakdown voltage and a 1A maximum collector current. Offers a minimum DC current gain (hFE) of 15 and a transition frequency of 3MHz. Packaged in a TO-252-3 (DPAK) surface mount package, this component operates within a temperature range of -65°C to 150°C with a maximum power dissipation of 1.56W. Lead-free and RoHS compliant.
Frequency3MHz
PackageTO-252-3
Current Rating1A
MountingSurface Mount
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Technical Specifications
Onsemi MJD29CTF technical specifications.
General
| Package/Case | TO-252-3 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector-emitter Voltage-Max | 700mV |
| Current Rating | 1A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 3MHz |
| Gain Bandwidth Product | 3MHz |
| hFE Min | 15 |
| Lead Free | Lead Free |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.56W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 1.56W |
| RoHS Compliant | Yes |
| Series | MJD29 |
| Transition Frequency | 3MHz |
| DC Rated Voltage | 100V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MJD29CTF Datasheet
Download the complete datasheet for Onsemi MJD29CTF to view detailed technical specifications.
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