NPN Bipolar Junction Transistor (BJT) in DPAK package, featuring a 60V collector-emitter breakdown voltage and a 10A continuous collector current. This power transistor offers a maximum power dissipation of 1.75W and a transition frequency of 2MHz. Designed for high-current applications, it operates within a temperature range of -55°C to 150°C and is RoHS compliant. The component is supplied in a 75-piece rail/tube.
Frequency2MHz
PackageDPAK
Current Rating10A
PolarityNPN
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Technical Specifications
Onsemi MJD3055G technical specifications.
General
| Package/Case | DPAK |
| Collector Base Voltage (VCBO) | 70V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 1.1V |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 8V |
| Current Rating | 10A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 2MHz |
| Gain Bandwidth Product | 2MHz |
| Height | 0.094inch |
| hFE Min | 20 |
| Lead Free | Lead Free |
| Length | 0.264inch |
| Max Collector Current | 10A |
| Max Frequency | 500kHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.75W |
| Number of Elements | 1 |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 1.75W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 2MHz |
| DC Rated Voltage | 60V |
| Width | 0.245inch |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MJD3055G Datasheet
Download the complete datasheet for Onsemi MJD3055G to view detailed technical specifications.
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