The MJD31C1 is a TO-251-3 packaged NPN transistor with a collector-emitter breakdown voltage of 100V and a maximum collector current of 50uA. It has a gain bandwidth product of 3MHz and a collector-emitter saturation voltage of 1.2V. The transistor is rated for operation over a temperature range of -65°C to 150°C and has a maximum power dissipation of 1.56W. It is available in a package quantity of 75 and is packaged in a rail/Tube format.
PackageTO-251-3
MountingThrough Hole
PolarityNPN
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Technical Specifications
Onsemi MJD31C1 technical specifications.
General
| Package/Case | TO-251-3 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 1.2V |
| Collector-emitter Voltage-Max | 1.2V |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 3MHz |
| hFE Min | 25 |
| Max Collector Current | 50uA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.56W |
| Mount | Through Hole |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| RoHS Compliant | No |
| Transition Frequency | 3MHz |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi MJD31C1 Datasheet
Download the complete datasheet for Onsemi MJD31C1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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