NPN Bipolar Junction Transistor (BJT) in a DPAK package, featuring a 100V collector-emitter voltage (VCEO) and a 3A continuous collector current. This power transistor offers a maximum power dissipation of 1.56W and a transition frequency of 3MHz. Designed for surface mounting, it operates within a temperature range of -65°C to 150°C and is supplied on a 2500-piece tape and reel.
Frequency3MHz
PackageDPAK
Current Rating3A
PolarityNPN
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Technical Specifications
Onsemi MJD31CT4G technical specifications.
General
| Package/Case | DPAK |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 1.2V |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector-emitter Voltage-Max | 1.2V |
| Current Rating | 3A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 3MHz |
| Gain Bandwidth Product | 3MHz |
| Height | 2.38mm |
| hFE Min | 25 |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Breakdown Voltage | 100V |
| Max Collector Current | 3A |
| Max Frequency | 3MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.56W |
| Number of Elements | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 1.56W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 3MHz |
| DC Rated Voltage | 100V |
| Width | 6.22mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MJD31CT4G Datasheet
Download the complete datasheet for Onsemi MJD31CT4G to view detailed technical specifications.
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