NPN Bipolar Junction Transistor (BJT) in DPAK package, featuring a 40V collector-emitter voltage (VCEO) and a 3A continuous collector current. This power transistor offers a maximum power dissipation of 1.56W and a transition frequency of 3MHz. With a minimum hFE of 25 and a collector-emitter saturation voltage of 1.2V, it operates across a temperature range of -65°C to 150°C. The component is RoHS compliant and supplied in tape and reel packaging.
Frequency3MHz
PackageDPAK
Current Rating3A
PolarityNPN
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Technical Specifications
Onsemi MJD31T4G technical specifications.
General
| Package/Case | DPAK |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | 1.2V |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector-emitter Voltage-Max | 1.2V |
| Current Rating | 3A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 3MHz |
| Gain Bandwidth Product | 3MHz |
| Height | 2.38mm |
| hFE Min | 25 |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 3A |
| Max Frequency | 1kHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.56W |
| Number of Elements | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 1.56W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 3MHz |
| DC Rated Voltage | 40V |
| Width | 6.22mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MJD31T4G Datasheet
Download the complete datasheet for Onsemi MJD31T4G to view detailed technical specifications.
No datasheet is available for this part.