PNP Bipolar Junction Transistor (BJT) for surface mount applications. Features a 100V collector-emitter breakdown voltage and a 3A maximum collector current. Offers a 1.56W power dissipation and a transition frequency of 3MHz. Packaged in a TO-252-3 case on a 2500-piece tape and reel. RoHS compliant and lead-free.
Frequency3MHz
PackageTO-252-3
Current Rating-1A
MountingSurface Mount
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Technical Specifications
Onsemi MJD32CTM technical specifications.
General
| Package/Case | TO-252-3 |
| Collector Base Voltage (VCBO) | -100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | -1.2V |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector-emitter Voltage-Max | 1.2V |
| Current Rating | -1A |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 3MHz |
| Gain Bandwidth Product | 3MHz |
| hFE Min | 10 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 100V |
| Max Collector Current | 3A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.56W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 1.56W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 3MHz |
| DC Rated Voltage | -100V |
| Weight | 0.26037g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MJD32CTM Datasheet
Download the complete datasheet for Onsemi MJD32CTM to view detailed technical specifications.
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