NPN bipolar power transistor designed for high voltage applications. Features a 300V collector-emitter breakdown voltage and a maximum collector current of 500mA. This surface mount device is housed in a DPAK package, offering a power dissipation of 1.56W. Operating temperature range spans from -65°C to 150°C, with a minimum hFE of 30. RoHS compliant.
Onsemi MJD340TF technical specifications.
| Package/Case | DPAK |
| Collector Base Voltage (VCBO) | 300V |
| Collector Emitter Breakdown Voltage | 300V |
| Collector Emitter Voltage (VCEO) | 300V |
| Emitter Base Voltage (VEBO) | 3V |
| Height | 2.3mm |
| hFE Min | 30 |
| Length | 6.6mm |
| Max Breakdown Voltage | 300V |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.56W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Cut Tape |
| Polarity | NPN |
| Power Dissipation | 1.56W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 300V |
| Weight | 0.26037g |
| Width | 6.1mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi MJD340TF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
