High voltage PNP bipolar power transistor with a 300V collector-emitter breakdown voltage and 300V collector-base voltage. Features a maximum collector current of -500mA and a low collector-emitter saturation voltage of 1V. Housed in a TO-252-3 (DPAK) package, this RoHS compliant component offers a minimum DC current gain (hFE) of 30 and a transition frequency of 10MHz. Rated for 15W power dissipation and operating from -65°C to 150°C, it is supplied in 75-unit tubes.
PackageTO-252-3
Current Rating-500mA
PolarityPNP
Power15W
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Technical Specifications
Onsemi MJD350G technical specifications.
General
| Package/Case | TO-252-3 |
| Collector Base Voltage (VCBO) | 300V |
| Collector Emitter Breakdown Voltage | 300V |
| Collector Emitter Saturation Voltage | 1V |
| Collector Emitter Voltage (VCEO) | 300V |
| Collector-emitter Voltage-Max | 300V |
| Current Rating | -500mA |
| Emitter Base Voltage (VEBO) | 3V |
| Height | 0.094inch |
| hFE Min | 30 |
| Lead Free | Lead Free |
| Length | 0.264inch |
| Max Collector Current | 100uA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.56W |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | PNP |
| Power Dissipation | 15W |
| RoHS Compliant | Yes |
| Transition Frequency | 10MHz |
| DC Rated Voltage | -300V |
| Width | 0.245inch |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MJD350G Datasheet
Download the complete datasheet for Onsemi MJD350G to view detailed technical specifications.
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