PNP Bipolar Junction Transistor (BJT) for surface mount applications. Features a 300V collector-emitter voltage, 0.5A continuous collector current, and 1560mW maximum power dissipation. Packaged in a TO-252 DPAK with gull-wing leads, this single-element silicon transistor offers a minimum DC current gain of 30. Operates within a temperature range of -65°C to 150°C.
PackageDPAK
MountingSurface Mount
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Technical Specifications
Onsemi MJD350RL technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | TO-252 |
| Package/Case | DPAK |
| Package Description | Deca Watt Package |
| Lead Shape | Gull-wing |
| Pin Count | 3 |
| PCB | 2 |
| Tab | Tab |
| Package Length (mm) | 6.73(Max) |
| Package Width (mm) | 6.22(Max) |
| Package Height (mm) | 2.38(Max) |
| Seated Plane Height (mm) | 2.51(Max) |
| Pin Pitch (mm) | 2.29 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Jedec | TO-252AA |
| Type | PNP |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 300V |
| Maximum Emitter Base Voltage | 3V |
| Maximum Collector-Emitter Voltage | 300V |
| Maximum DC Collector Current | 0.5A |
| Maximum Power Dissipation | 1560mW |
| Material | Si |
| Minimum DC Current Gain | 30@50mA@10V |
| Category | Bipolar Power |
| Min Operating Temperature | -65°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | 5V1P1 |
| EU RoHS | No |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Onsemi MJD350RL Datasheet
Download the complete datasheet for Onsemi MJD350RL to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.