High voltage PNP bipolar power transistor in a DPAK package. Features a 300V collector-emitter breakdown voltage and a 500mA maximum collector current. Offers a low 1V collector-emitter saturation voltage and a minimum hFE of 30. Designed for operation between -65°C and 150°C with 1.56W power dissipation. Packaged in tape and reel for 2500 units.
PackageDPAK
Current Rating-500mA
PolarityPNP
Power1.56W
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Technical Specifications
Onsemi MJD350T4G technical specifications.
General
| Package/Case | DPAK |
| Collector Base Voltage (VCBO) | 300V |
| Collector Emitter Breakdown Voltage | 300V |
| Collector Emitter Saturation Voltage | 1V |
| Collector Emitter Voltage (VCEO) | 300V |
| Collector-emitter Voltage-Max | 300V |
| Current Rating | -500mA |
| Emitter Base Voltage (VEBO) | 3V |
| Height | 2.38mm |
| hFE Min | 30 |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Breakdown Voltage | 300V |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.56W |
| Number of Elements | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 1.56W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 10MHz |
| DC Rated Voltage | -300V |
| Width | 6.22mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MJD350T4G Datasheet
Download the complete datasheet for Onsemi MJD350T4G to view detailed technical specifications.
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