High voltage PNP bipolar power transistor, surface mount DPAK package. Features 300V collector-emitter breakdown voltage and 500mA continuous collector current. Operates from -65°C to 150°C with 1.56W power dissipation. Includes 30 minimum hFE and 3MHz transition frequency. Lead-free and RoHS compliant.
PackageDPAK
Current Rating-500mA
MountingSurface Mount
PolarityPNP
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Technical Specifications
Onsemi MJD350TF technical specifications.
General
| Package/Case | DPAK |
| Collector Base Voltage (VCBO) | -300V |
| Collector Emitter Breakdown Voltage | 300V |
| Collector Emitter Voltage (VCEO) | 300V |
| Collector-emitter Voltage-Max | 1.2V |
| Current Rating | -500mA |
| Emitter Base Voltage (VEBO) | -3V |
| Height | 2.3mm |
| hFE Min | 30 |
| Lead Free | Lead Free |
| Length | 6.6mm |
| Max Breakdown Voltage | 300V |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.56W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 1.56W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 3MHz |
| DC Rated Voltage | -300V |
| Weight | 0.26037g |
| Width | 6.1mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MJD350TF Datasheet
Download the complete datasheet for Onsemi MJD350TF to view detailed technical specifications.
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