NPN Epitaxial Silicon Transistor for surface mount applications. Features a 100V collector-emitter voltage and 6A continuous collector current. Offers a minimum DC current gain (hFE) of 15 and a transition frequency of 3MHz. Packaged in DPAK for tape and reel distribution, this RoHS compliant component operates from -65°C to 150°C with a maximum power dissipation of 1.75W.
Frequency3MHz
PackageDPAK
Current Rating6A
MountingSurface Mount
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Technical Specifications
Onsemi MJD41CTF technical specifications.
General
| Package/Case | DPAK |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 1.5V |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector-emitter Voltage-Max | 1.5V |
| Current Rating | 6A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 3MHz |
| Gain Bandwidth Product | 3MHz |
| Height | 2.3mm |
| hFE Min | 15 |
| Lead Free | Lead Free |
| Length | 6.6mm |
| Max Breakdown Voltage | 100V |
| Max Collector Current | 6A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.75W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 1.75W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 3MHz |
| DC Rated Voltage | 100V |
| Weight | 0.26037g |
| Width | 6.1mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MJD41CTF Datasheet
Download the complete datasheet for Onsemi MJD41CTF to view detailed technical specifications.
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