The MJD42C1 is a PNP transistor with a collector base voltage of 100V and a collector emitter saturation voltage of 1.5V. It has a current rating of -6A and a maximum power dissipation of 1.75W. The transistor is packaged in a TO-251-3 case and is available in quantities of 75. It has a gain bandwidth product of 3MHz and a transition frequency of 3MHz. The MJD42C1 is not RoHS compliant and contains lead.
PackageTO-251-3
Current Rating-6A
PolarityPNP
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Technical Specifications
Onsemi MJD42C1 technical specifications.
General
| Package/Case | TO-251-3 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 1.5V |
| Collector-emitter Voltage-Max | 1.5V |
| Current Rating | -6A |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 3MHz |
| hFE Min | 30 |
| Lead Free | Contains Lead |
| Max Collector Current | 50uA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.75W |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | PNP |
| RoHS Compliant | No |
| Transition Frequency | 3MHz |
| DC Rated Voltage | -100V |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi MJD42C1 Datasheet
Download the complete datasheet for Onsemi MJD42C1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.