PNP Bipolar Junction Transistor (BJT) featuring a 100V collector-emitter breakdown voltage and a continuous collector current rating of 6A. This power transistor offers a minimum DC current gain (hFE) of 30 and a transition frequency of 3MHz. Encased in a DPAK package, it operates within a temperature range of -65°C to 150°C and has a maximum power dissipation of 1.75W. The component is RoHS compliant and supplied on an 1800-piece tape and reel.
Frequency1MHz
PackageDPAK
Current Rating-6A
PolarityPNP
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Technical Specifications
Onsemi MJD42CRLG technical specifications.
General
| Package/Case | DPAK |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 1.5V |
| Collector-emitter Voltage-Max | 1.5V |
| Current Rating | -6A |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 3MHz |
| Height | 2.38mm |
| hFE Min | 30 |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Collector Current | 6A |
| Max Frequency | 1MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.75W |
| Package Quantity | 1800 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 3MHz |
| DC Rated Voltage | -100V |
| Width | 6.22mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MJD42CRLG Datasheet
Download the complete datasheet for Onsemi MJD42CRLG to view detailed technical specifications.
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