NPN Power Bipolar Junction Transistor (BJT) for surface mount applications. Features 80V collector-emitter breakdown voltage and 8A continuous collector current. Offers a maximum power dissipation of 1.75W and a transition frequency of 50MHz. Packaged in DPAK for tape and reel distribution, this RoHS compliant component operates from -65°C to 150°C.
Frequency50MHz
PackageDPAK
Current Rating8A
MountingSurface Mount
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Technical Specifications
Onsemi MJD44H11TF technical specifications.
General
Package/Case
DPAK
Collector Base Voltage (VCBO)
80V
Collector Emitter Breakdown Voltage
80V
Collector Emitter Saturation Voltage
1V
Collector Emitter Voltage (VCEO)
80V
Collector-emitter Voltage-Max
1V
Current Rating
8A
Emitter Base Voltage (VEBO)
5V
Frequency
50MHz
Gain Bandwidth Product
50MHz
Height
2.3mm
hFE Min
60
Lead Free
Lead Free
Length
6.6mm
Max Breakdown Voltage
80V
Max Collector Current
8A
Max Frequency
1MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
1.75W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
1.75W
Radiation Hardening
No
RoHS Compliant
Yes
Transition Frequency
50MHz
DC Rated Voltage
80V
Weight
0.26037g
Width
6.1mm
Compliance
RoHS
Compliant
Datasheet
Onsemi MJD44H11TF Datasheet
Download the complete datasheet for Onsemi MJD44H11TF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.