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Technical Specifications
Onsemi MJD45H11-001 technical specifications.
General
| Package/Case | TO-251-3 |
| Collector Base Voltage (VCBO) | 5V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 1V |
| Collector-emitter Voltage-Max | 1V |
| Current Rating | -8A |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 90MHz |
| hFE Min | 60 |
| Lead Free | Contains Lead |
| Max Collector Current | 8A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.75W |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | PNP |
| RoHS Compliant | No |
| Transition Frequency | 90MHz |
| DC Rated Voltage | -80V |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi MJD45H11-001 Datasheet
Download the complete datasheet for Onsemi MJD45H11-001 to view detailed technical specifications.
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