PNP Bipolar Junction Transistor (BJT) in a DPAK package, featuring a 80V collector-emitter breakdown voltage and an 8A maximum collector current. This component offers a 90MHz transition frequency and a minimum hFE of 60, with a maximum power dissipation of 1.75W. Designed for general-purpose applications, it operates within a temperature range of -55°C to 150°C and is RoHS compliant.
Frequency90MHz
PackageDPAK
Current Rating-8A
PolarityPNP
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Technical Specifications
Onsemi MJD45H11G technical specifications.
General
Package/Case
DPAK
Collector Base Voltage (VCBO)
5V
Collector Emitter Breakdown Voltage
80V
Collector Emitter Saturation Voltage
1V
Collector Emitter Voltage (VCEO)
80V
Collector-emitter Voltage-Max
1V
Current Rating
-8A
Emitter Base Voltage (VEBO)
5V
Frequency
90MHz
Gain Bandwidth Product
90MHz
Halogen Free
Halogen Free
Height
2.38mm
hFE Min
60
Lead Free
Lead Free
Length
6.73mm
Max Collector Current
8A
Max Frequency
90MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.75W
Number of Elements
1
Package Quantity
75
Packaging
Rail/Tube
Polarity
PNP
Power Dissipation
1.75W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
90MHz
DC Rated Voltage
-80V
Width
6.22mm
Compliance
RoHS
Compliant
Datasheet
Onsemi MJD45H11G Datasheet
Download the complete datasheet for Onsemi MJD45H11G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.