PNP Power Bipolar Junction Transistor, surface mount in TO-252 package. Features 80V collector-emitter breakdown voltage and 8A continuous collector current. Offers a minimum DC current gain (hFE) of 60 and a transition frequency of 40MHz. Operates from -55°C to 150°C with a maximum power dissipation of 1.75W. RoHS compliant and lead-free.
Frequency40MHz
PackageTO-252
Current Rating-8A
MountingSurface Mount
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Technical Specifications
Onsemi MJD45H11TM technical specifications.
General
| Package/Case | TO-252 |
| Collector Base Voltage (VCBO) | -80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | -1V |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 1V |
| Current Rating | -8A |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 40MHz |
| Gain Bandwidth Product | 40MHz |
| hFE Min | 60 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 80V |
| Max Collector Current | 8A |
| Max Frequency | 40MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.75W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 1.75W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 40MHz |
| DC Rated Voltage | -80V |
| Weight | 0.26037g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MJD45H11TM Datasheet
Download the complete datasheet for Onsemi MJD45H11TM to view detailed technical specifications.
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