High voltage NPN bipolar power transistor in a DPAK package, featuring a 400V collector-emitter breakdown voltage and a 1A maximum collector current. This component offers a 1V collector-emitter saturation voltage and a 10MHz transition frequency. Designed for demanding applications, it operates within a temperature range of -65°C to 150°C and boasts a maximum power dissipation of 1.56W. The transistor is RoHS compliant and supplied in a 75-unit rail/tube package.
Frequency10MHz
PackageDPAK
Current Rating1A
PolarityNPN
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Technical Specifications
Onsemi MJD50G technical specifications.
General
| Package/Case | DPAK |
| Collector Base Voltage (VCBO) | 500V |
| Collector Emitter Breakdown Voltage | 400V |
| Collector Emitter Saturation Voltage | 1V |
| Collector Emitter Voltage (VCEO) | 400V |
| Collector-emitter Voltage-Max | 1V |
| Current Rating | 1A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 10MHz |
| Gain Bandwidth Product | 10MHz |
| Height | 0.094inch |
| hFE Min | 30 |
| Lead Free | Lead Free |
| Length | 0.264inch |
| Max Collector Current | 1A |
| Max Frequency | 2MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.56W |
| Number of Elements | 1 |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 1.56W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 10MHz |
| DC Rated Voltage | 400V |
| Width | 0.245inch |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MJD50G Datasheet
Download the complete datasheet for Onsemi MJD50G to view detailed technical specifications.
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