PNP Bipolar Junction Power Transistor, 350V Collector-Emitter Voltage, 1A Max Collector Current, and 1.56W Power Dissipation. Features a 10MHz Gain Bandwidth Product and 30 Minimum hFE. Packaged in a TO-252-3 (DPAK) with 2500 units per reel. Operating temperature range from -55°C to 150°C.
Frequency10MHz
PackageTO-252-3
Current Rating1A
PolarityPNP
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Technical Specifications
Onsemi MJD5731T4 technical specifications.
General
| Package/Case | TO-252-3 |
| Collector Base Voltage (VCBO) | 5V |
| Collector Emitter Breakdown Voltage | 350V |
| Collector Emitter Saturation Voltage | 1V |
| Collector Emitter Voltage (VCEO) | 350V |
| Collector-emitter Voltage-Max | 1V |
| Current Rating | 1A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 10MHz |
| Gain Bandwidth Product | 10MHz |
| hFE Min | 30 |
| Lead Free | Contains Lead |
| Max Collector Current | 100uA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.56W |
| Number of Elements | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 1.56W |
| RoHS Compliant | No |
| Transition Frequency | 10MHz |
| DC Rated Voltage | -350V |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi MJD5731T4 Datasheet
Download the complete datasheet for Onsemi MJD5731T4 to view detailed technical specifications.
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