PNP Bipolar Junction Transistor (BJT) in TO-252-3 package. Features a 350V collector-emitter breakdown voltage and 350V collector-emitter voltage (VCEO). Offers a continuous collector current rating of 1A and a maximum power dissipation of 1.56W. Minimum DC current gain (hFE) is 30, with a transition frequency of 10MHz. Operates within a temperature range of -55°C to 150°C and is RoHS compliant.
PackageTO-252-3
Current Rating-1A
PolarityPNP
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Technical Specifications
Onsemi MJD5731T4G technical specifications.
General
| Package/Case | TO-252-3 |
| Collector Base Voltage (VCBO) | 5V |
| Collector Emitter Breakdown Voltage | 350V |
| Collector Emitter Saturation Voltage | 1V |
| Collector Emitter Voltage (VCEO) | 350V |
| Collector-emitter Voltage-Max | 1V |
| Current Rating | -1A |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 10MHz |
| hFE Min | 30 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 350V |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.56W |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 10MHz |
| DC Rated Voltage | -350V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MJD5731T4G Datasheet
Download the complete datasheet for Onsemi MJD5731T4G to view detailed technical specifications.
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