NPN Bipolar Junction Transistor (BJT) designed for power applications. Features a 400V collector-emitter breakdown voltage and a 12A continuous collector current rating. Operates with a maximum power dissipation of 100W and a transition frequency of 4MHz. Packaged in a standard TO-220AB through-hole mount with 3 leads, suitable for rail/tube packaging. This lead-free component offers a maximum collector-emitter saturation voltage of 1V.
Frequency4MHz
PackageTO-220AB
Current Rating12A
MountingThrough Hole
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Technical Specifications
Onsemi MJE13009G technical specifications.
General
| Package/Case | TO-220AB |
| Collector Base Voltage (VCBO) | 700V |
| Collector Emitter Breakdown Voltage | 400V |
| Collector Emitter Saturation Voltage | 1V |
| Collector Emitter Voltage (VCEO) | 400V |
| Collector-emitter Voltage-Max | 3V |
| Current Rating | 12A |
| Emitter Base Voltage (VEBO) | 9V |
| Frequency | 4MHz |
| Gain Bandwidth Product | 4MHz |
| Height | 9.28mm |
| hFE Min | 8 |
| Lead Free | Lead Free |
| Length | 10.28mm |
| Max Collector Current | 12A |
| Max Frequency | 4MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 2W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 100W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 4MHz |
| DC Rated Voltage | 400V |
| Width | 4.82mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MJE13009G Datasheet
Download the complete datasheet for Onsemi MJE13009G to view detailed technical specifications.
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