NPN bipolar junction transistor featuring a 350V collector-emitter breakdown voltage and a 4A maximum collector current. This TO-220-3 packaged transistor offers a 30MHz transition frequency and a minimum hFE of 100. Designed for general-purpose amplification and switching applications, it operates within a temperature range of -65°C to 150°C and is RoHS compliant. Power dissipation is rated at 2W.
Frequency30MHz
PackageTO-220-3
Current Rating4A
PolarityNPN
Quick Jump:
Technical Specifications
Onsemi MJE15034G technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 350V |
| Collector Emitter Breakdown Voltage | 350V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Emitter Voltage (VCEO) | 350V |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | 4A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 30MHz |
| Gain Bandwidth Product | 30MHz |
| Height | 9.28mm |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Length | 10.28mm |
| Max Collector Current | 4A |
| Max Frequency | 30MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 2W |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | MJE15034 |
| Transition Frequency | 30MHz |
| DC Rated Voltage | 350V |
| Width | 4.82mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MJE15034G Datasheet
Download the complete datasheet for Onsemi MJE15034G to view detailed technical specifications.
No datasheet is available for this part.
Product Images
