PNP Bipolar Junction Transistor (BJT) with a 40V Collector-Emitter Voltage (VCEO) and a maximum collector current of 3A. Features a 50MHz transition frequency and a minimum hFE of 50. Packaged in a TO-225-3 case, this RoHS compliant component operates from -65°C to 150°C with a power dissipation of 12.5W.
Frequency50MHz
PackageTO-225-3
Current Rating2A
PolarityPNP
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Technical Specifications
Onsemi MJE170G technical specifications.
General
| Package/Case | TO-225-3 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | 1.7V |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector-emitter Voltage-Max | 1.7V |
| Current Rating | 2A |
| Emitter Base Voltage (VEBO) | 7V |
| Frequency | 50MHz |
| Gain Bandwidth Product | 50MHz |
| hFE Min | 50 |
| Lead Free | Lead Free |
| Max Collector Current | 3A |
| Max Frequency | 50MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.5W |
| Number of Elements | 1 |
| Package Quantity | 500 |
| Packaging | Bulk |
| Polarity | PNP |
| Power Dissipation | 12.5W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 50MHz |
| DC Rated Voltage | -40V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MJE170G Datasheet
Download the complete datasheet for Onsemi MJE170G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.