PNP bipolar power transistor featuring a 60V collector-emitter breakdown voltage and a 3A maximum collector current. This component offers a 50MHz transition frequency and a minimum hFE of 50. Packaged in a TO-225-3 case, it operates within a temperature range of -65°C to 150°C and has a power dissipation of 12.5W. The transistor is RoHS compliant and supplied in bulk packaging.
Frequency50MHz
PackageTO-225-3
Current Rating-3A
PolarityPNP
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Technical Specifications
Onsemi MJE171G technical specifications.
General
Package/Case
TO-225-3
Collector Base Voltage (VCBO)
80V
Collector Emitter Breakdown Voltage
60V
Collector Emitter Saturation Voltage
1.7V
Collector Emitter Voltage (VCEO)
60V
Collector-emitter Voltage-Max
1.7V
Current Rating
-3A
Emitter Base Voltage (VEBO)
7V
Frequency
50MHz
Gain Bandwidth Product
50MHz
Height
0.437inch
hFE Min
50
Lead Free
Lead Free
Length
0.307inch
Max Collector Current
3A
Max Frequency
50MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
1.5W
Number of Elements
1
Package Quantity
500
Packaging
Bulk
Polarity
PNP
Power Dissipation
12.5W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
50MHz
DC Rated Voltage
-60V
Width
0.118inch
Compliance
RoHS
Compliant
Datasheet
Onsemi MJE171G Datasheet
Download the complete datasheet for Onsemi MJE171G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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