Onsemi
MJE18004D2G
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network, TO-220 3 LEAD STANDARD, 50-TUBE
PackageTO-220-3
Current Rating5A
MountingThrough Hole
PolarityNPN
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Technical Specifications
Onsemi MJE18004D2G technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 1kV |
| Collector Emitter Breakdown Voltage | 450V |
| Collector Emitter Saturation Voltage | 380mV |
| Collector-emitter Voltage-Max | 750mV |
| Current Rating | 5A |
| Emitter Base Voltage (VEBO) | 12V |
| Gain Bandwidth Product | 13MHz |
| hFE Min | 15 |
| Lead Free | Lead Free |
| Max Collector Current | 100uA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 75W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| RoHS Compliant | Yes |
| Transition Frequency | 13MHz |
| DC Rated Voltage | 450V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MJE18004D2G Datasheet
Download the complete datasheet for Onsemi MJE18004D2G to view detailed technical specifications.
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