NPN Epitaxial Silicon Transistor in a TO-126 package, designed for through-hole mounting. Features a maximum collector current of 3A and a collector-emitter voltage (VCEO) of 40V. Offers a minimum DC current gain (hFE) of 50 and a transition frequency of 50MHz. Operates within a temperature range of -65°C to 150°C, with a maximum power dissipation of 1.5W. This RoHS compliant component is supplied in a rail/tube package.
Frequency50MHz
PackageTO-126
Current Rating3A
MountingThrough Hole
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Technical Specifications
Onsemi MJE180STU technical specifications.
General
| Package/Case | TO-126 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | 1.7V |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector-emitter Voltage-Max | 1.7V |
| Current Rating | 3A |
| Emitter Base Voltage (VEBO) | 7V |
| Frequency | 50MHz |
| Gain Bandwidth Product | 50MHz |
| Height | 11mm |
| hFE Min | 50 |
| Lead Free | Lead Free |
| Length | 8mm |
| Max Collector Current | 3A |
| Max Frequency | 100kHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.5W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 60 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 1.5W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 50MHz |
| DC Rated Voltage | 40V |
| Weight | 0.761g |
| Width | 3.25mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MJE180STU Datasheet
Download the complete datasheet for Onsemi MJE180STU to view detailed technical specifications.
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