NPN Power Bipolar Junction Transistor (BJT) in TO-126 package, featuring a 3A maximum collector current and 80V collector-emitter breakdown voltage. This through-hole mounted component offers a minimum DC current gain (hFE) of 50 and a transition frequency of 50MHz. It operates within a temperature range of -65°C to 150°C and has a maximum power dissipation of 1.5W. The transistor is RoHS compliant and supplied in a rail/tube package.
Frequency50MHz
PackageTO-126
Current Rating3A
MountingThrough Hole
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Technical Specifications
Onsemi MJE182STU technical specifications.
General
| Package/Case | TO-126 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 1.7V |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 1.7V |
| Current Rating | 3A |
| Emitter Base Voltage (VEBO) | 7V |
| Frequency | 50MHz |
| Gain Bandwidth Product | 50MHz |
| Height | 11mm |
| hFE Min | 50 |
| Lead Free | Lead Free |
| Length | 8mm |
| Max Collector Current | 3A |
| Max Frequency | 50MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.5W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 60 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 1.5W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | MJE182 |
| Transition Frequency | 50MHz |
| DC Rated Voltage | 80V |
| Weight | 0.761g |
| Width | 3.25mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MJE182STU Datasheet
Download the complete datasheet for Onsemi MJE182STU to view detailed technical specifications.
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