NPN bipolar power transistor featuring a 25V collector-emitter voltage and 5A maximum collector current. This through-hole component offers a minimum DC current gain (hFE) of 45 and a transition frequency of 65MHz. Housed in a TO-126 plastic package, it supports a maximum power dissipation of 15W and operates within a temperature range of -65°C to 150°C. The transistor is lead-free and RoHS compliant.
Frequency65MHz
PackageTO-126
Current Rating5A
MountingThrough Hole
Quick Jump:
Technical Specifications
Onsemi MJE200STU technical specifications.
General
| Package/Case | TO-126 |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 25V |
| Collector Emitter Saturation Voltage | 1.8V |
| Collector Emitter Voltage (VCEO) | 25V |
| Collector-emitter Voltage-Max | 1.8V |
| Current Rating | 5A |
| DC Current Gain-Min (hFE) | 10 |
| Emitter Base Voltage (VEBO) | 8V |
| Frequency | 65MHz |
| Gain Bandwidth Product | 65MHz |
| hFE Min | 45 |
| JEDEC-95 Code | TO-126 |
| JESD-30 Code | R-PSFM-T3 |
| Lead Free | Lead Free |
| Max Collector Current | 5A |
| Max Frequency | 65MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 15W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Body Material | Plastic |
| Package Quantity | 60 |
| Package Shape | Rectangular |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 15W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Surface Mount | No |
| Terminal Finish | Tin |
| Terminal Form | Through Hole |
| Terminal Position | SINGLE |
| Transistor Element Material | SILICON |
| Transition Frequency | 65MHz |
| DC Rated Voltage | 25V |
| Weight | 0.761g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MJE200STU Datasheet
Download the complete datasheet for Onsemi MJE200STU to view detailed technical specifications.
No datasheet is available for this part.
Product Images
