NPN bipolar junction transistor (BJT) in a TO-126 package, designed for through-hole mounting. Features a maximum collector current of 5A and a collector-emitter breakdown voltage of 25V. Offers a minimum DC current gain (hFE) of 45 and a transition frequency of 65MHz. Maximum power dissipation is 15W, with operating temperatures ranging from -65°C to 150°C. This component is lead-free and RoHS compliant.
Frequency65MHz
PackageTO-126
Current Rating5A
MountingThrough Hole
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Technical Specifications
Onsemi MJE200TSTU technical specifications.
General
| Package/Case | TO-126 |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 25V |
| Collector Emitter Saturation Voltage | 1.8V |
| Collector Emitter Voltage (VCEO) | 25V |
| Collector-emitter Voltage-Max | 1.8V |
| Current Rating | 5A |
| Emitter Base Voltage (VEBO) | 8V |
| Frequency | 65MHz |
| Gain Bandwidth Product | 65MHz |
| hFE Min | 45 |
| Lead Free | Lead Free |
| Max Collector Current | 5A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 15W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 60 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 15W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 65MHz |
| DC Rated Voltage | 25V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MJE200TSTU Datasheet
Download the complete datasheet for Onsemi MJE200TSTU to view detailed technical specifications.
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