The MJE210TG is a PNP bipolar junction transistor with a collector base voltage of 40V and a current rating of -5A. It has a gain bandwidth product of 65MHz and a minimum current gain of 70. The transistor is packaged in a TO-225-3 case and is compliant with RoHS regulations. It operates over a temperature range of -65°C to 150°C and has a maximum power dissipation of 15W.
PackageTO-225-3
Current Rating-5A
PolarityPNP
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Technical Specifications
Onsemi MJE210TG technical specifications.
General
| Package/Case | TO-225-3 |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | 1.8V |
| Collector-emitter Voltage-Max | 1.8V |
| Current Rating | -5A |
| Emitter Base Voltage (VEBO) | 8V |
| Gain Bandwidth Product | 65MHz |
| hFE Min | 70 |
| Lead Free | Lead Free |
| Max Collector Current | 100nA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 15W |
| Package Quantity | 50 |
| Packaging | Bulk |
| Polarity | PNP |
| RoHS Compliant | Yes |
| Transition Frequency | 65MHz |
| DC Rated Voltage | -25V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MJE210TG Datasheet
Download the complete datasheet for Onsemi MJE210TG to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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